 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NPN Silicon Darlington Transistors SMBTA 13 SMBTA 14 High DC current gain q High collector current q Collector-emitter saturation voltage q Type SMBTA 13 SMBTA 14 Marking s1M s1N Ordering Code (tape and reel) Q68000-A6475 Q68000-A6476 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 81 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 30 30 10 300 500 100 200 330 150 - 65 ... + 150 Unit V mA mW C 280 210 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 13 SMBTA 14 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 A Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 10 A Collector-base cutoff current VCB = 30 V Emitter-base cutoff current VEB = 10 V DC current gain IC = 10 mA, VCE = 5 V1) IC = 100 mA, VCE = 5 V1) SMBTA 13 SMBTA 14 SMBTA 13 SMBTA 14 VCEsat VBEsat V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 IEB0 hFE 5000 10000 10000 20000 - - - - - - - - - - - - 1.5 2 V 30 30 10 - - - - - - - - - - 100 100 - nA V Values typ. max. Unit Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT 125 - - MHz 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 SMBTA 13 SMBTA 14 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Capacitance CCB0 = f (VCB0) CEB0 = f (VEB0) f = 1 MHz Permissible pulse load Ptot max / Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V, f = 20 MHz Semiconductor Group 3 SMBTA 13 SMBTA 14 Base-emitter saturation voltage IC = f (VBE sat) hFE = 1000 Collector-emitter saturation voltage IC = f (VCE sat) hFE = 1000 Collector cutoff current ICB0 = f (TA) VCB = 30 V DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 4 |
Price & Availability of SMBTA14
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |